Schottky Source/Drain MOSFET (SSD-MOSFET) is an attractive design for ballistic MOSFETs. However, achieving high-drive current is difficult because of the relatively high potential barrier (Schottky barrier) at the source. To alleviate this problem, We propose a new Schottky-barrier-height (SBH) engineering technique which introduces strain to lower the barrier height. We demonstrate that the SBH at the source/channel junction could be modulated by tensile-stress applied to the Si channel. By increasing the Ge content in the SiGe buffer layer from 20% to 34%, a 61% drive current improvement was achieved. This improvement is partly due to the barrier reduction and partly due to the mobility enhancement.
|Number of pages||12|
|Publication status||Published - 1 Dec 2004|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 3 Oct 2004 → 8 Oct 2004
|Conference||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||3/10/04 → 8/10/04|