Schottky barrier height engineering with a strained-Si channel for sub-50nm gate Schottky Source/Drain MOSFETS

Keiji Ikeda, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Takashi Mimura

Research output: Contribution to conferencePaper

Abstract

Schottky Source/Drain MOSFET (SSD-MOSFET) is an attractive design for ballistic MOSFETs. However, achieving high-drive current is difficult because of the relatively high potential barrier (Schottky barrier) at the source. To alleviate this problem, We propose a new Schottky-barrier-height (SBH) engineering technique which introduces strain to lower the barrier height. We demonstrate that the SBH at the source/channel junction could be modulated by tensile-stress applied to the Si channel. By increasing the Ge content in the SiGe buffer layer from 20% to 34%, a 61% drive current improvement was achieved. This improvement is partly due to the barrier reduction and partly due to the mobility enhancement.

Original languageEnglish
Pages471-482
Number of pages12
Publication statusPublished - 1 Dec 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 3 Oct 20048 Oct 2004

Conference

ConferenceSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period3/10/048/10/04

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Ikeda, K., Yamashita, Y., Endoh, A., Hikosaka, K., & Mimura, T. (2004). Schottky barrier height engineering with a strained-Si channel for sub-50nm gate Schottky Source/Drain MOSFETS. 471-482. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.