Pressure-Induced Structural Phase Transition in Eu3Bi2S4F4

Kento Ishigaki; Hanming Ma; Hui Fei Zhai; Yishuai Jing; Hisao Kobayashi; Yoshiya Uwatoko

doi:10.7566/JPSJ.92.075001

Pressure-Induced Structural Phase Transition in Eu₃Bi₂S₄F₄

Kento Ishigaki, Hanming Ma, Hui Fei Zhai, Yishuai Jing, Hisao Kobayashi, Yoshiya Uwatoko

Department of Applied Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

The powder X-ray diffraction pattern of the BiS2-based compound Eu3Bi2S4F4, acquired under high pressure, reveals a structural phase transition at 3.55 GPa. Reportedly, Eu3Bi2S4F4 exhibits a metal-semiconductor transition and bulk superconductivity at pressures close to 4 GPa. These transitions are induced by structural phase transition.

Original language	English
Article number	075001
Journal	journal of the physical society of japan
Volume	92
Issue number	7
DOIs	https://doi.org/10.7566/JPSJ.92.075001
Publication status	Published - 15 Jul 2023

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title = "Pressure-Induced Structural Phase Transition in Eu3Bi2S4F4",

abstract = "The powder X-ray diffraction pattern of the BiS2-based compound Eu3Bi2S4F4, acquired under high pressure, reveals a structural phase transition at 3.55 GPa. Reportedly, Eu3Bi2S4F4 exhibits a metal-semiconductor transition and bulk superconductivity at pressures close to 4 GPa. These transitions are induced by structural phase transition.",

author = "Kento Ishigaki and Hanming Ma and Zhai, {Hui Fei} and Yishuai Jing and Hisao Kobayashi and Yoshiya Uwatoko",

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AU - Ishigaki, Kento

AU - Ma, Hanming

AU - Zhai, Hui Fei

AU - Jing, Yishuai

AU - Kobayashi, Hisao

AU - Uwatoko, Yoshiya

PY - 2023/7/15

Y1 - 2023/7/15

N2 - The powder X-ray diffraction pattern of the BiS2-based compound Eu3Bi2S4F4, acquired under high pressure, reveals a structural phase transition at 3.55 GPa. Reportedly, Eu3Bi2S4F4 exhibits a metal-semiconductor transition and bulk superconductivity at pressures close to 4 GPa. These transitions are induced by structural phase transition.

AB - The powder X-ray diffraction pattern of the BiS2-based compound Eu3Bi2S4F4, acquired under high pressure, reveals a structural phase transition at 3.55 GPa. Reportedly, Eu3Bi2S4F4 exhibits a metal-semiconductor transition and bulk superconductivity at pressures close to 4 GPa. These transitions are induced by structural phase transition.

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ER -

Pressure-Induced Structural Phase Transition in Eu₃Bi₂S₄F₄

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