Preparation and properties of soft ferroelectric BaTiO3 thin film by sol-gel process

J. Thongrueng; K. Nishio; T. Tsuchiya; K. Nagata; Y. Masuda

Preparation and properties of soft ferroelectric BaTiO₃ thin film by sol-gel process

J. Thongrueng, K. Nishio, T. Tsuchiya, K. Nagata, Y. Masuda

Department of Materials Science and Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

Soft ferroelectric BaTiO₃ ceramics having a very low coercive field of 40 V/mm were prepared by substituting 9mol% Hf-Zr for Ti-site of BaTiO₃. Accordingly, the soft ferroelectric materials have great potential for applications in ferroelectric thin-film devices due to a relatively low coercive field, which allows easy switching of the ferroelectric domains. In addition, sol-gel-derived soft ferroelectric BaTiO₃ thin films were prepared by spin coating. The microstructure and electrical properties of the films were measured on Pt and Pt/Ti/SiO₂/Si(100) (hereinafter, "PS") substrates. The room-temperature coercive field, Ec, and remanent polarization, Pr, for the 870-nm-thick soft ferroelectric BaTiO₃ thin film prepared on platinized silicon substrate at 700°C were determined to be 25 kV/cm and 7 μC/cm², respectively. Those for the film prepared on the Pt substrate at 950°C were 18 kV/cm and 9 μC/cm², respectively.

Original language	English
Pages	243-246
Number of pages	4
Publication status	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 21 Jul 2000 → 2 Aug 2000

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	21/07/00 → 2/08/00

Cite this

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title = "Preparation and properties of soft ferroelectric BaTiO3 thin film by sol-gel process",

abstract = "Soft ferroelectric BaTiO3 ceramics having a very low coercive field of 40 V/mm were prepared by substituting 9mol% Hf-Zr for Ti-site of BaTiO3. Accordingly, the soft ferroelectric materials have great potential for applications in ferroelectric thin-film devices due to a relatively low coercive field, which allows easy switching of the ferroelectric domains. In addition, sol-gel-derived soft ferroelectric BaTiO3 thin films were prepared by spin coating. The microstructure and electrical properties of the films were measured on Pt and Pt/Ti/SiO2/Si(100) (hereinafter, {"}PS{"}) substrates. The room-temperature coercive field, Ec, and remanent polarization, Pr, for the 870-nm-thick soft ferroelectric BaTiO3 thin film prepared on platinized silicon substrate at 700°C were determined to be 25 kV/cm and 7 μC/cm2, respectively. Those for the film prepared on the Pt substrate at 950°C were 18 kV/cm and 9 μC/cm2, respectively.",

author = "J. Thongrueng and K. Nishio and T. Tsuchiya and K. Nagata and Y. Masuda",

year = "2000",

language = "English",

pages = "243--246",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

}

TY - CONF

T1 - Preparation and properties of soft ferroelectric BaTiO3 thin film by sol-gel process

AU - Thongrueng, J.

AU - Nishio, K.

AU - Tsuchiya, T.

AU - Nagata, K.

AU - Masuda, Y.

PY - 2000

Y1 - 2000

N2 - Soft ferroelectric BaTiO3 ceramics having a very low coercive field of 40 V/mm were prepared by substituting 9mol% Hf-Zr for Ti-site of BaTiO3. Accordingly, the soft ferroelectric materials have great potential for applications in ferroelectric thin-film devices due to a relatively low coercive field, which allows easy switching of the ferroelectric domains. In addition, sol-gel-derived soft ferroelectric BaTiO3 thin films were prepared by spin coating. The microstructure and electrical properties of the films were measured on Pt and Pt/Ti/SiO2/Si(100) (hereinafter, "PS") substrates. The room-temperature coercive field, Ec, and remanent polarization, Pr, for the 870-nm-thick soft ferroelectric BaTiO3 thin film prepared on platinized silicon substrate at 700°C were determined to be 25 kV/cm and 7 μC/cm2, respectively. Those for the film prepared on the Pt substrate at 950°C were 18 kV/cm and 9 μC/cm2, respectively.

AB - Soft ferroelectric BaTiO3 ceramics having a very low coercive field of 40 V/mm were prepared by substituting 9mol% Hf-Zr for Ti-site of BaTiO3. Accordingly, the soft ferroelectric materials have great potential for applications in ferroelectric thin-film devices due to a relatively low coercive field, which allows easy switching of the ferroelectric domains. In addition, sol-gel-derived soft ferroelectric BaTiO3 thin films were prepared by spin coating. The microstructure and electrical properties of the films were measured on Pt and Pt/Ti/SiO2/Si(100) (hereinafter, "PS") substrates. The room-temperature coercive field, Ec, and remanent polarization, Pr, for the 870-nm-thick soft ferroelectric BaTiO3 thin film prepared on platinized silicon substrate at 700°C were determined to be 25 kV/cm and 7 μC/cm2, respectively. Those for the film prepared on the Pt substrate at 950°C were 18 kV/cm and 9 μC/cm2, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0034583186&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034583186

SP - 243

EP - 246

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

Preparation and properties of soft ferroelectric BaTiO₃ thin film by sol-gel process

Abstract

Conference

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