Organic photo-FET using photo sensitive polymer insulator

Manabu Yoshida, Hiroki Kawai, Takeshi Kondo, Takeshi Kawai, Kouji Suemori, Sei Uemura, Satoshi Hoshino, Takehito Kozasa, Toshihide Kamata

Research output: Contribution to conferencePaper

Abstract

We fabricated a photo field effect transistor having a poly(N-vynil carbazole) (PVK) insulator layer. PVK has been employed as a material for photosensitive layer in copiers and LASER printer, because PVK has excellent photoconductivity and durability to external stimuli. Therefore, we employed PVK as a photosensitive insulator material for the Photo FET. In this photo FET, illumination of a blue light to the PVK insulator drastically improved the field effect mobility and the On-Off ratio. This result would be due to that the photo-generated carriers in the PVK layer were effectively accumulated in the gate capacitor of the photo FET. We think that these excellent photo-switching properties can be utilized for producing photo sensor, photo memory and so on.

Original languageEnglish
Pages4698-4699
Number of pages2
Publication statusPublished - 1 Dec 2006
Event55th Society of Polymer Science Japan Symposium on Macromolecules - Toyama, Japan
Duration: 20 Sep 200622 Sep 2006

Conference

Conference55th Society of Polymer Science Japan Symposium on Macromolecules
CountryJapan
CityToyama
Period20/09/0622/09/06

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Keywords

  • Organic semiconductor
  • PVK
  • Pentacene
  • Photo-FET
  • Photo-sensitive polymer

Cite this

Yoshida, M., Kawai, H., Kondo, T., Kawai, T., Suemori, K., Uemura, S., ... Kamata, T. (2006). Organic photo-FET using photo sensitive polymer insulator. 4698-4699. Paper presented at 55th Society of Polymer Science Japan Symposium on Macromolecules, Toyama, Japan.