Optogalvanic spectroscopy of silicon atoms

Y. Ueda, T. Iwane, H. Kumagai, T. Meguro, K. Midorikawa, M. Obara

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Laser spectroscopy is usually performed to make laser pass in the gas where the target atoms are contained, and this configuration is not good for the spectroscopy of silicon atoms owing to its very low vapor pressure. Hence, a hollow-cathode lamp is used and optogalvanic spectroscopy is performed, to keep high density of the silicon atoms in the discharge. This paper presents the optogalvanic spectroscopy of silicon atoms with a deep ultraviolet coherent light source, and observed spectral lines around 252nm.

Original languageEnglish
Pages (from-to)283-284
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1 Dec 2002
Event2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom
Duration: 10 Nov 200214 Nov 2002

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