Optimization of Pb content in a precursor solution for the fabrication of (Pb,La)(Zr,Ti)O3 films for optical applications by chemical solution deposition

Hiromi Shima; Hiroshi Naganuma; Yukihiro Ishii; Akira Takashima; Soichiro Okamura

doi:10.1080/00150190701544840

Optimization of Pb content in a precursor solution for the fabrication of (Pb,La)(Zr,Ti)O₃ films for optical applications by chemical solution deposition

Hiromi Shima, Hiroshi Naganuma, Yukihiro Ishii, Akira Takashima, Soichiro Okamura

Department of Applied Physics

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

400-nm-thick (Pb,La)(Zr,Ti)O₃ (PLZT) films with a composition of Pb:La:Zr:Ti = X:3:65:35 were fabricated on (111)Pt/Ti/SiO₂/(100)Si substrates at 700°C by chemical solution deposition using precursor solutions with Pb contents of X = 107, 112, 116, 121 and 126. The PLZT films fabricated from the solutions of X = 107 and 112 had bimodal structure and included pyrochlore phase. The pyrochlore region decreased with increasing the Pb content, and single perovskite phase PLZT films with well-filled structure were obtained at the Pb contents of 121 and 126. From these results, we concluded that the Pb-content of X = 121 (125 mol% relative to a stoichiometric value) was optimum for the fabrication of PLZT films for optical applications. This optimization slightly improved electrical and electrooptic properties of the PLZT films, and finally the PLZT(121/3/65/35) film showed the Pockels coefficient of 84 pm/V.

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Ferroelectrics
Volume	357
Issue number	1 PART 3
DOIs	https://doi.org/10.1080/00150190701544840
Publication status	Published - 2007
Event	5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan Duration: 3 Sept 2006 → 7 Sept 2006

Keywords

(Pb,La)(Zr,Ti)O
CSD
Electrooptic effect
Film
Pb content

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10.1080/00150190701544840

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title = "Optimization of Pb content in a precursor solution for the fabrication of (Pb,La)(Zr,Ti)O3 films for optical applications by chemical solution deposition",

abstract = "400-nm-thick (Pb,La)(Zr,Ti)O3 (PLZT) films with a composition of Pb:La:Zr:Ti = X:3:65:35 were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates at 700°C by chemical solution deposition using precursor solutions with Pb contents of X = 107, 112, 116, 121 and 126. The PLZT films fabricated from the solutions of X = 107 and 112 had bimodal structure and included pyrochlore phase. The pyrochlore region decreased with increasing the Pb content, and single perovskite phase PLZT films with well-filled structure were obtained at the Pb contents of 121 and 126. From these results, we concluded that the Pb-content of X = 121 (125 mol% relative to a stoichiometric value) was optimum for the fabrication of PLZT films for optical applications. This optimization slightly improved electrical and electrooptic properties of the PLZT films, and finally the PLZT(121/3/65/35) film showed the Pockels coefficient of 84 pm/V.",

keywords = "(Pb,La)(Zr,Ti)O, CSD, Electrooptic effect, Film, Pb content",

author = "Hiromi Shima and Hiroshi Naganuma and Yukihiro Ishii and Akira Takashima and Soichiro Okamura",

year = "2007",

doi = "10.1080/00150190701544840",

language = "English",

volume = "357",

pages = "223--227",

journal = "Ferroelectrics",

issn = "0015-0193",

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note = "5th Asian Meeting on Ferroelectricity, AMF-5 ; Conference date: 03-09-2006 Through 07-09-2006",

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TY - JOUR

T1 - Optimization of Pb content in a precursor solution for the fabrication of (Pb,La)(Zr,Ti)O3 films for optical applications by chemical solution deposition

AU - Shima, Hiromi

AU - Naganuma, Hiroshi

AU - Ishii, Yukihiro

AU - Takashima, Akira

AU - Okamura, Soichiro

PY - 2007

Y1 - 2007

N2 - 400-nm-thick (Pb,La)(Zr,Ti)O3 (PLZT) films with a composition of Pb:La:Zr:Ti = X:3:65:35 were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates at 700°C by chemical solution deposition using precursor solutions with Pb contents of X = 107, 112, 116, 121 and 126. The PLZT films fabricated from the solutions of X = 107 and 112 had bimodal structure and included pyrochlore phase. The pyrochlore region decreased with increasing the Pb content, and single perovskite phase PLZT films with well-filled structure were obtained at the Pb contents of 121 and 126. From these results, we concluded that the Pb-content of X = 121 (125 mol% relative to a stoichiometric value) was optimum for the fabrication of PLZT films for optical applications. This optimization slightly improved electrical and electrooptic properties of the PLZT films, and finally the PLZT(121/3/65/35) film showed the Pockels coefficient of 84 pm/V.

AB - 400-nm-thick (Pb,La)(Zr,Ti)O3 (PLZT) films with a composition of Pb:La:Zr:Ti = X:3:65:35 were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates at 700°C by chemical solution deposition using precursor solutions with Pb contents of X = 107, 112, 116, 121 and 126. The PLZT films fabricated from the solutions of X = 107 and 112 had bimodal structure and included pyrochlore phase. The pyrochlore region decreased with increasing the Pb content, and single perovskite phase PLZT films with well-filled structure were obtained at the Pb contents of 121 and 126. From these results, we concluded that the Pb-content of X = 121 (125 mol% relative to a stoichiometric value) was optimum for the fabrication of PLZT films for optical applications. This optimization slightly improved electrical and electrooptic properties of the PLZT films, and finally the PLZT(121/3/65/35) film showed the Pockels coefficient of 84 pm/V.

KW - (Pb,La)(Zr,Ti)O

KW - CSD

KW - Electrooptic effect

KW - Film

KW - Pb content

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DO - 10.1080/00150190701544840

M3 - Conference article

AN - SCOPUS:65149097017

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VL - 357

SP - 223

EP - 227

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 3

T2 - 5th Asian Meeting on Ferroelectricity, AMF-5

Y2 - 3 September 2006 through 7 September 2006

ER -

Optimization of Pb content in a precursor solution for the fabrication of (Pb,La)(Zr,Ti)O₃ films for optical applications by chemical solution deposition

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