We study the optical effects on superconductor-normal metal superconductor (S-Sm-S) junctions composed of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure and NbN superconducting electrodes. When the whole junction area was illuminated at λ 800 nm, we observe a reduction in the normal resistance due to an increase in the sheet carrier density of the 2DEG, and the enhancement of the Andreev reflection probability. To reveal its origin, we performed scanning photo-voltage measurement by employing an optical microscope. The obtained image plots show maxima and minima of the photo-voltage change along the S-Sm interfaces. Those structures are considered to reflect the modulation of the barrier height at S-Sm interface and the increase in the scattering by photo-generated carriers. It is demonstrated that the scanning photo-voltage measurement is one of the most powerful tools as a local probe of the transport properties of S-Sm-S junctions.