To clarify the dependence of the exciton absorption recovery time on wire width in multiple quantum well (MQW) narrow wires, we performed numerical calculations using a simple model with damage effects. The drastic reduction in recovery time for heavily damaged wires is attributed to the formation of a `dead layer', in which carriers vanish almost immediately, near the sidewalls. For lighter damage, the recovery time curve shifts downward with increasing damage as if surface recombination velocity had been increased. The carrier density profile for lighter damage indicates that the optical nonlinearity is not degraded for light damage although the recovery time is reduced.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||1 B|
|Publication status||Published - 1 Jan 1993|
|Event||1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 26 Aug 1992 → 28 Aug 1992