Numerical analyses of all-optical gate switches employing periodically poled lithium niobate devices: Pattern effect of domain length error

Yutaka Fukuchi, Taichi Matsuura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We calculate characteristics of all-optical gate switches using the PPLN devices with consideration for the domain length error. The error causes decrease in the output power. Variation of the error pattern changes the output waveform.

Original languageEnglish
Title of host publication22nd Microoptics Conference, MOC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages286-287
Number of pages2
ISBN (Electronic)9784863486096
DOIs
Publication statusPublished - 19 Nov 2017
Event22nd Microoptics Conference, MOC 2017 - Tokyo, Japan
Duration: 19 Nov 201722 Nov 2017

Publication series

Name22nd Microoptics Conference, MOC 2017
Volume2017-November

Conference

Conference22nd Microoptics Conference, MOC 2017
CountryJapan
CityTokyo
Period19/11/1722/11/17

Cite this

Fukuchi, Y., & Matsuura, T. (2017). Numerical analyses of all-optical gate switches employing periodically poled lithium niobate devices: Pattern effect of domain length error. In 22nd Microoptics Conference, MOC 2017 (pp. 286-287). (22nd Microoptics Conference, MOC 2017; Vol. 2017-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/MOC.2017.8244598