Abstract
We describe a CMOS image sensor with column parallel Analog to Digital Conversion circuits. In this method, we use small 1bit comparator which detects each bit during integration ! $ repeatedly ! % 8 bit value is determined when the integration is finished. Consequently, both the A/D conversion and the integration of the pixel value can be done in parallel. We have designed a prototype by using column parallel architecture ! % The prototype outputs analog value and 8 bit digital value of pixel data. It has 32 × 16 pixels and digital memory for each pixel ! % We describe the processing scheme of our ADC and the circuit and layout design of the prototype ! % We show results of some experiments.
| Original language | English |
|---|---|
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 626 |
| Publication status | Published - 1 Jan 2001 |
| Event | Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications - San Francisco, CA, United States Duration: 24 Apr 2000 → 27 Apr 2000 |