Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Akira Endoh, Issei Watanabe, Akifumi Kasamatsu, Takashi Mimura

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a 'realistic' buried gate in which the tip of gate foot is 'round.' We found that the 'effective' gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the 'round' tip of gate electrode is convenient to prevent breakdown.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages261-264
Number of pages4
ISBN (Electronic)9781479952885
DOIs
Publication statusPublished - 20 Oct 2014
Event2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
Duration: 9 Sep 201411 Sep 2014

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
Country/TerritoryJapan
CityYokohama
Period9/09/1411/09/14

Keywords

  • Buried gate
  • Electric field
  • Electron velocity
  • Gate length
  • HEMTs
  • InAlAs
  • InGaAs
  • Monte Carlo simulation

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