TY - JOUR
T1 - Molecular dynamics simulation on the dielectric properties of water confined in a nanospace between graphene and a h-BN substrate
AU - Kioka, Yusei
AU - Maekawa, Yuki
AU - Yamamoto, Takahiro
N1 - Publisher Copyright:
© 2023 The Japan Society of Applied Physics.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Using a molecular dynamics simulation, we theoretically investigate the dielectric response of confined water intruded between graphene and a hexagonal boron nitride (h-BN) substrate. The dielectric constant of confined water with a thickness of 1 nm is only εr ∼ 2, which is much smaller than that of bulk water (erbulk = 72.89). As the thickness h increases, εr begins to increase as well when h exceeds a few nanometers and then approaches erbulk. The results of rotational autocorrelation functions suggest that the dielectric constant of the confined water is small because of the limited rotational degrees of freedom of the water on the graphene and h-BN substrate surfaces. In addition, the saturation electric field of the confined water with h < 100 nm is much higher than the breakdown electric field of the h-BN substrate (0.7 V/nm).
AB - Using a molecular dynamics simulation, we theoretically investigate the dielectric response of confined water intruded between graphene and a hexagonal boron nitride (h-BN) substrate. The dielectric constant of confined water with a thickness of 1 nm is only εr ∼ 2, which is much smaller than that of bulk water (erbulk = 72.89). As the thickness h increases, εr begins to increase as well when h exceeds a few nanometers and then approaches erbulk. The results of rotational autocorrelation functions suggest that the dielectric constant of the confined water is small because of the limited rotational degrees of freedom of the water on the graphene and h-BN substrate surfaces. In addition, the saturation electric field of the confined water with h < 100 nm is much higher than the breakdown electric field of the h-BN substrate (0.7 V/nm).
UR - http://www.scopus.com/inward/record.url?scp=85181527840&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/ad0cd8
DO - 10.35848/1347-4065/ad0cd8
M3 - Article
AN - SCOPUS:85181527840
SN - 0021-4922
VL - 63
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 015002
ER -