Mg2Si基热电材料的性能优化研究及其进展

Jun Chen; Lei Yan; Chao Wang; Xin Wei Zhao; Zhong Hua Min

doi:10.3969/j.issn.1001-0548.2018.05.018

Mg₂Si基热电材料的性能优化研究及其进展

Translated title of the contribution: Research Progress on the Improvement of Thermoelectric Properties of Mg₂Si-based Materials

Jun Chen, Lei Yan, Chao Wang, Xin Wei Zhao, Zhong Hua Min

Department of Physics

Research output: Contribution to journal › Review article › peer-review

2 Citations (Scopus)

Abstract

The important mid-temperature thermoelectric materials Mg₂Si-based semiconducting compounds have attracted considerable interest due to their abundance, low cost and nontoxic constituents, as well as optimizable electric properties caused by tunable effective mass and mobility of carriers. This paper reviews the latest progress of Mg₂Si-based solid solutions. The methods to improve thermoelectric performance are discussed. The comparison of the advantages and drawbacks of various fabrication techniques is proposed. It is shown that, the present researches are focused on the n-type materials, and it is urgent to optimize the p-type materials properties. Doping is an effective method, and combining doping and nanostructuring through the process optimizing can further enhance thermoelectric properties.

Translated title of the contribution	Research Progress on the Improvement of Thermoelectric Properties of Mg₂Si-based Materials
Original language	Chinese (Simplified)
Pages (from-to)	753-760
Number of pages	8
Journal	Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China
Volume	47
Issue number	5
DOIs	https://doi.org/10.3969/j.issn.1001-0548.2018.05.018
Publication status	Published - 30 Sept 2018

Keywords

Doping
MgSi
Nanostructuring
Thermoelectric properties

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10.3969/j.issn.1001-0548.2018.05.018

Cite this

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title = "Mg2Si基热电材料的性能优化研究及其进展",

abstract = "The important mid-temperature thermoelectric materials Mg2Si-based semiconducting compounds have attracted considerable interest due to their abundance, low cost and nontoxic constituents, as well as optimizable electric properties caused by tunable effective mass and mobility of carriers. This paper reviews the latest progress of Mg2Si-based solid solutions. The methods to improve thermoelectric performance are discussed. The comparison of the advantages and drawbacks of various fabrication techniques is proposed. It is shown that, the present researches are focused on the n-type materials, and it is urgent to optimize the p-type materials properties. Doping is an effective method, and combining doping and nanostructuring through the process optimizing can further enhance thermoelectric properties.",

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T1 - Mg2Si基热电材料的性能优化研究及其进展

AU - Chen, Jun

AU - Yan, Lei

AU - Wang, Chao

AU - Zhao, Xin Wei

AU - Min, Zhong Hua

PY - 2018/9/30

Y1 - 2018/9/30

N2 - The important mid-temperature thermoelectric materials Mg2Si-based semiconducting compounds have attracted considerable interest due to their abundance, low cost and nontoxic constituents, as well as optimizable electric properties caused by tunable effective mass and mobility of carriers. This paper reviews the latest progress of Mg2Si-based solid solutions. The methods to improve thermoelectric performance are discussed. The comparison of the advantages and drawbacks of various fabrication techniques is proposed. It is shown that, the present researches are focused on the n-type materials, and it is urgent to optimize the p-type materials properties. Doping is an effective method, and combining doping and nanostructuring through the process optimizing can further enhance thermoelectric properties.

AB - The important mid-temperature thermoelectric materials Mg2Si-based semiconducting compounds have attracted considerable interest due to their abundance, low cost and nontoxic constituents, as well as optimizable electric properties caused by tunable effective mass and mobility of carriers. This paper reviews the latest progress of Mg2Si-based solid solutions. The methods to improve thermoelectric performance are discussed. The comparison of the advantages and drawbacks of various fabrication techniques is proposed. It is shown that, the present researches are focused on the n-type materials, and it is urgent to optimize the p-type materials properties. Doping is an effective method, and combining doping and nanostructuring through the process optimizing can further enhance thermoelectric properties.

KW - Doping

KW - MgSi

KW - Nanostructuring

KW - Thermoelectric properties

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DO - 10.3969/j.issn.1001-0548.2018.05.018

M3 - Review article

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JO - Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China

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Mg₂Si基热电材料的性能优化研究及其进展

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Keywords

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