Melt growth of crystalline α-SrSi₂ by the vertical Bridgman method and its thermoelectric characteristics

Keyphrases

• Band Gap 100%
• Calculation Method 50%
• Crystallinity 50%
• Environmentally Benign 50%
• Equilibrium Processes 50%
• Experimental Values 100%
• First-principles Calculations 100%
• Growth Rate 50%
• Hybrid Functional 50%
• Low Temperature Regime 50%
• Melt Growth 100%
• Narrow-gap Semiconductor 50%
• Phase Reaction 50%
• Power Factor 50%
• Reaction Temperature 50%
• Room Temperature 50%
• Seebeck Coefficient 50%
• Semiconducting Properties 50%
• Semiconductor Materials 50%
• Single-crystalline 50%
• Temperature Range 50%
• Thermodynamically Stable 50%
• Thermoelectric Characteristics 100%
• Thermoelectric Materials 50%
• Undoped 50%
• Vertical Bridgman Method 100%

Engineering

• Band Gap 100%
• Crystallinity 33%
• Equilibrium Process 33%
• Experimental Value 66%
• Functionals 33%
• Good Agreement 33%
• Low-Temperature 33%
• Melt Growth 100%
• Melting Point 33%
• Phase Reaction 33%
• Power Factor 33%
• Room Temperature 33%
• Seebeck Effect 33%
• Semiconductor Material 33%
• Temperature Range 33%
• Thermoelectric Materials 33%
• Thermoelectricity 100%

Material Science

• Crystal Growth From Melt 100%
• Melt Growth 100%
• Semiconductor Material 100%
• Thermoelectric Materials 100%
• Thermoelectrics 100%