Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism

Wataru Namiki, Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Physical reservoir computing is a promising way to develop efficient artificial intelligence using physical devices exhibiting nonlinear dynamics. Although magnetic materials have advantages in miniaturization, the need for a magnetic field and large electric current results in high electric power consumption and a complex device structure. To resolve these issues, we propose a redox-based physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance, which are phenomena described by different nonlinear functions of the magnetization vector that do not need a magnetic field to be applied. The expressive power of this reservoir based on a compact all-solid-state redox transistor is higher than the previous physical reservoir. The normalized mean square error of the reservoir on a second-order nonlinear equation task was 1.69 × 10-3, which is lower than that of a memristor array (3.13 × 10-3) even though the number of reservoir nodes was fewer than half that of the memristor array.

Original languageEnglish
Pages (from-to)4383-4392
Number of pages10
JournalNano Letters
Volume24
Issue number15
DOIs
Publication statusPublished - 17 Apr 2024

Keywords

  • Lithium ion
  • Magnetic property tuning
  • Planar Hall effect
  • Redox
  • Reservoir computing
  • Solid-state electrolyte

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