Abstract
Physical reservoir computing is a promising way to develop efficient artificial intelligence using physical devices exhibiting nonlinear dynamics. Although magnetic materials have advantages in miniaturization, the need for a magnetic field and large electric current results in high electric power consumption and a complex device structure. To resolve these issues, we propose a redox-based physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance, which are phenomena described by different nonlinear functions of the magnetization vector that do not need a magnetic field to be applied. The expressive power of this reservoir based on a compact all-solid-state redox transistor is higher than the previous physical reservoir. The normalized mean square error of the reservoir on a second-order nonlinear equation task was 1.69 × 10-3, which is lower than that of a memristor array (3.13 × 10-3) even though the number of reservoir nodes was fewer than half that of the memristor array.
Original language | English |
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Pages (from-to) | 4383-4392 |
Number of pages | 10 |
Journal | Nano Letters |
Volume | 24 |
Issue number | 15 |
DOIs | |
Publication status | Published - 17 Apr 2024 |
Keywords
- Lithium ion
- Magnetic property tuning
- Planar Hall effect
- Redox
- Reservoir computing
- Solid-state electrolyte