Low-temperature silicon epitaxial growth by co2 laser cvd using sih4 gas

Takashi Meguro, Yukihito Ishihara, Tadatsugu Itoh, Hideo Tashirc

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Silicon epitaxial growth at a low substrate temperature by C02 laser chemical vapor deposition using SiH4 has been investigated. Single-crystalline Si was grown at a deposition rate of 15 A/s at 650°C under an SiH4 pressure of 0.05 Torr and a C02 laser power of 6 W/cm2 on an Si substrate. The crystalline quality of deposited Si films was examined by reflection high-energy electron diffraction, and it was found that the deposition rate depends on the incident angle and the polarization of the C02 laser beam. This is the first report on low-temperature Si epitaxial growth by C02 laser CVD.

Original languageEnglish
Pages (from-to)524-527
Number of pages4
JournalJapanese Journal of Applied Physics
Volume25
Issue number4
DOIs
Publication statusPublished - Apr 1986

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