Low-Power InP-HEMT Switch ICs Integrating Miniaturized 2 × 2 Switches for 10-Gb/s Systems

Hideki Kamitsuna, Yasuro Yamane, Masami Tokumitsu, Hirohiko Sugahara, Masahiro Muraguchi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This paper presents a wideband cold-FET switch with virtually zero power dissipation. The use of InP HEMTs with a low Ron · C off product enables us to configure a DC-to-over-10-GHz single-pole double-throw (SPDT) switch without using a shunt FET. The series-FET configuration offers a logic-level-independent interface and makes possible positive control voltage operation in spite of using depletion-mode FETs. A miniaturized 2 × 2 switch using two SPDT switches yields an insertion loss of less than 1.16 dB and isolation of more than 21.2 dB below 10 GHz, which allows us to increase the scale of the switch in a single chip easily. The add-drop operation combining two 2 × 2 switches in a single chip and a 4 × 4 switch IC integrating four 2 × 2 switches are presented. The packaged ICs achieve error-free operation up to 12.5 Gb/s with either positive or negative logic-level input. Extremely fast switching of ∼140 ps is also successfully demonstrated.

Original languageEnglish
Pages (from-to)452-459
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume41
Issue number2
DOIs
Publication statusPublished - 1 Feb 2006

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Keywords

  • FET switches
  • InP HEMT
  • Logic-level independence
  • Low power
  • RF switches
  • Series-FET configuration

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