Laser-defined epitaxial growth of gaas.

A. Doi, T. Meguro, S. Iwai, Y. Aoyagi, Susumu Namba

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Local-area epitaxial growth of GaAs by photochemical surface reactions due to the laser irradiation has been studied, and the surface reactions have been analyzed by a rate equation approach. A stepwise monolayer epitaxy was achieved by laser metal-organic vapor phase epitaxy (MOVPE) using group III alkyls of trimethylgallium (TMG) and triethylgallium (TEG). A CW Ar-ion laser was irradiated onto the (100)-oriented GaAs surface. The photon energy is not large enough to decompose TMG/TEG in the gas phase, but a large enhancement in the growth rate was observed due to photochemical surface catalytic decomposition of adsorbed alkyls. The analysis showed that a selective enhancement of the decomposition rate for adsorbed alkyls on As-terminated surfaces is the main reason to the successful stepwise monolayer epitaxy of GaAs.

Original languageEnglish
Title of host publicationCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
PublisherPubl by IEEE
Pages322
Number of pages1
ISBN (Print)155752033X
Publication statusPublished - 1988

Publication series

NameCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7

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