Large signal analysis of AlGaN/GaN-HEMT amplifier by coupled physical device-circuit simulation

Hiroki Fujishiro, S. Narita, Y. Tomita

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The large signal time domain simulation of the 40 GHz one-stage amplifier with the AlGaN/GaN-HEMT is performed by means of the coupled physical device-circuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physics-based device model. The forward and the backward travelling waves are extracted from the current and the voltage signal waveforms at the input and the output terminals, and then the power performances of the amplifier are evaluated using them. The amplifier exhibits the linear power gain (G a) of 12.9 dB and the saturation output power (P o.sat) of 25.7 dBm at 40 GHz. The influence of the impact ionization on the power performances is also investigated.

Original languageEnglish
Pages (from-to)1866-1871
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number7
DOIs
Publication statusPublished - 1 May 2006

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