L-band ultra low power consumption monolithic low noise amplifier

Masashi Nakatsugawa, Yo Yamaguchi, Masahiro Muraguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

A low-power-consumption variable-gain low noise amplifier (LNA) is developed. In order to achieve low noise, high gain, low distortion and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs MESFET (DFET) is employed. The amplifier shows state-of-the-art performance with NF of 2.0 dB, gain of 12.2 dB and IP3 of 5.1 dBm at 1.9 GHz at power consumption of 2.0 mW, and NF of 2.4 dB, gain of 10.2 dB and IP3 of 2.7 dBm at 1 mW. Moreover, the LNA's gain is controllable according to the receiving level and it can be turned off while the transmitter is operating.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
PublisherPubl by IEEE
Pages45-48
Number of pages4
ISBN (Print)0780313933
Publication statusPublished - 1 Dec 1993
EventProceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA
Duration: 10 Oct 199313 Oct 1993

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Conference

ConferenceProceedings of the 15th Annual IEEE GaAs IC Symposium
CitySan Jose, CA, USA
Period10/10/9313/10/93

    Fingerprint

Cite this

Nakatsugawa, M., Yamaguchi, Y., & Muraguchi, M. (1993). L-band ultra low power consumption monolithic low noise amplifier. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 45-48). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.