InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology

Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Hiroto Ishii, Kazuaki Ohishi, Akira Endoh, Hiroki Fujishiro

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

InGaAs photo field-effect transistors (PhotoFETs) integrated on a half-inch Si wafer have been demonstrated by means of layer transfer technology. According to the Raman measurement and scanning transmission electron microscopy, the InGaAs layer was transferred onto the half-inch Si wafer without degradation of crystal quality or introduction of strain. The optical performance of InGaAs photoFETs on Si, operating in shortwave infrared (SWIR) region was also investigated. The photoFETs on Si wafer show a responsivity of ∼3 A W-1 at SWIR of 1550 nm with investigated range of bias. These results demonstrate InGaAs layer transfer technology is suitable for SWIR detectors on CMOS compatible platforms for monolithic integration.

Original languageEnglish
Article numberSGGE03
JournalJapanese Journal of Applied Physics
Volume59
Issue numberSG
DOIs
Publication statusPublished - 1 Apr 2020

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