Influence of junction capacitance of switching devices on class E rectifier

Keiichi Sakuma, Hirotaka Koizumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A Class E low dv/dt rectifier, which is a counterpart of a Class E zero-voltage-switching (ZVS) inverter, is suitable for high-frequency and high-efficiency rectification with low noise. In the Class E low dv/dt rectifier, the junction capacitance of the diode is included in the shunt capacitor, which has been regarded as a constant capacitance. However, some kinds of Class E rectifiers have a MOSFET instead of a diode to regulate the output power or to reduce the power dissipation. The junction capacitance of a MOSFET is generally larger than the junction capacitance of a diode. Therefore, depending on the value of the shunt capacitor, the nonlinear behavior of the junction capacitance cannot be ignored. In this paper, the influence of the nonlinear behavior of the junction capacitance on the switch voltage waveform of the Class E low dv/dt rectifier with MOSFET is verified and discussed based on the results with numerical analysis and circuit experiments.

Original languageEnglish
Title of host publication2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages1965-1968
Number of pages4
DOIs
Publication statusPublished - 26 Oct 2009
Event2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan, Province of China
Duration: 24 May 200927 May 2009

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
CountryTaiwan, Province of China
CityTaipei
Period24/05/0927/05/09

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Sakuma, K., & Koizumi, H. (2009). Influence of junction capacitance of switching devices on class E rectifier. In 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 (pp. 1965-1968). [5118175] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2009.5118175