The synthesis of the bismuth layer-structured ferroelectric, SrxBiyTa2O9 (SBT; x=0.7-1.0, y=2.00-2.30), ceramics was attempted using a conventional solid-state reaction. Sintering was carried out at 1150°C for 2 h to prevent vaporization of the bismuth oxide. SBT ceramics with a random orientation were obtained. The ferroelectric properties along the directions parallel and perpendicular to the pressing direction were measured for these SBT ceramics. The maximum values of the remanent polarization (2Pr) for x=0.7, 0.8, 0.9, and 1.0 were obtained at Bi contents of y=2.23, 2.15, 2.10, and 2.00 in both directions, respectively.
|Number of pages||4|
|Journal||Key Engineering Materials|
|Publication status||Published - 1 Jan 2002|
|Event||Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan|
Duration: 1 Oct 2001 → 1 Oct 2001
- Strontium Bismuth Tantalate