Influence of Bi-contents on electric properties of strontium bismuth tantalate ceramics

Kazuya Komagata, Soichiro Okamura, Hiroaki Takeda, Tadashi Shiosaki

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Abstract

The synthesis of the bismuth layer-structured ferroelectric, SrxBiyTa2O9 (SBT; x=0.7-1.0, y=2.00-2.30), ceramics was attempted using a conventional solid-state reaction. Sintering was carried out at 1150°C for 2 h to prevent vaporization of the bismuth oxide. SBT ceramics with a random orientation were obtained. The ferroelectric properties along the directions parallel and perpendicular to the pressing direction were measured for these SBT ceramics. The maximum values of the remanent polarization (2Pr) for x=0.7, 0.8, 0.9, and 1.0 were obtained at Bi contents of y=2.23, 2.15, 2.10, and 2.00 in both directions, respectively.

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalKey Engineering Materials
Volume228-229
Publication statusPublished - 1 Jan 2002
EventAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
Duration: 1 Oct 20011 Oct 2001

Keywords

  • BLSFs
  • Ferroelectric
  • SBT
  • Strontium Bismuth Tantalate

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