Abstract
We have developed a successive formation of shallow junction and ohmic electrode on the same area of substrate by Si implantepitaxy assisted with P for impurity species. The implantepitaxy by means of Si PI-MBE (partially ionized molecular beam epitaxy) accomplishes ion implantation of impurity and successive growth of epitaxial Si film on the same area. The formation of p-n homojunction and ohmic electrode on Si substrate, also n-n heterojunction and ohmic electrode on GaP substrate are reported.
| Original language | English |
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| Pages | 455-462 |
| Number of pages | 8 |
| Publication status | Published - 1 Dec 1984 |