A short gate length inverted HEMT using a new gate fabrication technique is reported. The photoresist opening for gate formation was narrowed by evaporated Ti at a small angle. By using this technique, not only the gate length was reduced but also the Schottky characteristics were improved. The uniformity of threshold voltage was not degraded. A 0. 28 mu m gate I-HEMT was fabricated and a small drain conductance of 13mS/mm was observed. A minimum propagation delay time of 11. 9psec/gate with a power dissipation of 0. 560m/gate was obtained for a 0. 5 mu m DCFL ring oscillator at room temperature.