High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators

Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We proposed and fabricated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using SiN/SiO2/SiN triple-layer insulators. The role of each insulator is as follows: The topmost SiN film mechanically supports the T-shaped gate, the middle SiO2 film, which is damaged during the dry etching of the topmost SiN film, can be wet-chemically etched, and the bottom SiN film stabilizes the AlGaN surface. Therefore, the proposed MIS-HEMTs are mechanically stable in the sub-50-nm-gate region and free from damage caused by dry etching. We obtained a cutoff frequency fT of 139 GHz for a 45-nm-gate MIS-HEMT. This fT is the highest value for AlGaN/GaN HEMTs grown by metal organic chemical vapor deposition. We also estimated the average electron velocity under the gate to be 2.4 × 107 cm/s for a 120-nm-gate MIS-HEMT by transit time analysis.

Original languageEnglish
Pages (from-to)3364-3367
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 25 Apr 2006

Keywords

  • AlGaN/GaN
  • Cutoff frequency
  • Electron velocity
  • HEMT
  • High electron mobility transistor
  • MIS
  • Metal-insulator-semiconductor
  • SiN
  • SiO
  • Transit time analysis

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