High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation) - MESFETs

A. Kanda, S. Kodama, T. Furuta, T. Nittono, T. Ishibashi, M. Muraguchi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

19 GHz-band GaAs MESFET switch ICs have been demonstrated, intended for use in high-speed wireless LAN systems. The FET channel is fabricated on a SiO2 insulator in order to reduce parasitic FET drain-source capacitance (Cds) which acts as off-state capacitance (Coff) in switches. The LOXI (Layered-Oxide-Isolation)-MESFET has enough DC and RF performance for use as an active device. On-state FET resistance (Ron) remains the same as that of conventional MESFETs while Coff is reduced. This allows the use of larger gate-width switch FETs, which yield low insertion loss. The measured simple SPST (single-pole, single-throw) switch has low insertion loss of 0.5 dB and high isolation of 23 dB at 19 GHz. The measured simple SPDT (single-pole, double-throw) switch also has good characteristics, 0.8 dB insertion loss and 17 dB isolation at 19 GHz.

Original languageEnglish
Pages[d]62-65
Publication statusPublished - 1 Dec 1997
EventProceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Anaheim, CA, USA
Duration: 12 Oct 199715 Oct 1997

Conference

ConferenceProceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityAnaheim, CA, USA
Period12/10/9715/10/97

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    Kanda, A., Kodama, S., Furuta, T., Nittono, T., Ishibashi, T., & Muraguchi, M. (1997). High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation) - MESFETs. [d]62-65. Paper presented at Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Anaheim, CA, USA, .