Heterogeneous GaN-Si integration via plasma activation direct bonding

Takashi Matsumae, Mu Fengwen, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi, Tadatomo Suga

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1 Citation (Scopus)

Abstract

Direct bonding of GaN and Si substrates at 125 °C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The substrates activated by a sequential oxygen and nitrogen plasma were strongly bonded so that the fracture within GaN bulk occurred during strength measurement. A ∼3-nm-thick amorphous layer consisting of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may shed light on the advanced electronic devices using the GaN-Si heterostructure.

Original languageEnglish
Article number156933
JournalJournal of Alloys and Compounds
Volume852
DOIs
Publication statusPublished - 25 Jan 2021

Keywords

  • Nitride material
  • Semiconductors
  • Solid state reactions
  • Surfaces and interfaces

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