Heterogeneous GaN-Si integration via plasma activation direct bonding

Takashi Matsumae, Mu Fengwen, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi, Tadatomo Suga

Research output: Contribution to journalArticle

Abstract

Direct bonding of GaN and Si substrates at 125 °C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The substrates activated by a sequential oxygen and nitrogen plasma were strongly bonded so that the fracture within GaN bulk occurred during strength measurement. A ∼3-nm-thick amorphous layer consisting of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may shed light on the advanced electronic devices using the GaN-Si heterostructure.

Original languageEnglish
Article number156933
JournalJournal of Alloys and Compounds
Volume852
DOIs
Publication statusPublished - 25 Jan 2021

Keywords

  • Nitride material
  • Semiconductors
  • Solid state reactions
  • Surfaces and interfaces

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  • Cite this

    Matsumae, T., Fengwen, M., Fukumoto, S., Hayase, M., Kurashima, Y., Higurashi, E., Takagi, H., & Suga, T. (2021). Heterogeneous GaN-Si integration via plasma activation direct bonding. Journal of Alloys and Compounds, 852, [156933]. https://doi.org/10.1016/j.jallcom.2020.156933