Growth of Ba2NaNb5O15 thin films on MgO(100) by the pulsed laser ablation method

Shizutoshi Ando; Kaoru Konakahara; Soichiro Okamura; Takeyo Tsukamoto

doi:10.1143/jjap.37.5211

Growth of Ba₂NaNb₅O₁₅ thin films on MgO(100) by the pulsed laser ablation method

Shizutoshi Ando, Kaoru Konakahara, Soichiro Okamura, Takeyo Tsukamoto

Research output: Contribution to journal › Article › peer-review

Abstract

Ba₂NaNb₅O₁₅ (BNN) thin films were grown on MgO(100) by the pulsed laser ablation method using BNN ceramic targets. The characterization of the thin films was carried out by X-ray diffraction, a scanning electron microscope and an electron probe micro analyzer. The chemical composition of BNN thin films approached the BNN stoichiometry and improved with increasing O₂ gas pressure. We obtained the BNN single phase thin films with strong c-axis orientation and nearly stoichiometoric composition deposited on MgO(100) at the laser energy density of 5.0 J/cm², the substrate temperature of 600°C and the O₂ gas pressure of 0.3 Torr.

Original language	English
Pages (from-to)	5211-5214
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	9 PART B
DOIs	https://doi.org/10.1143/jjap.37.5211
Publication status	Published - Sept 1998

Keywords

BaNaNbO (BNN)
Pulsed laser ablation method
Thin films
X-ray diffraction

Access to Document

10.1143/jjap.37.5211

Cite this

@article{0528e06d2f0543ce9e48d2d6d447a1e0,

title = "Growth of Ba2NaNb5O15 thin films on MgO(100) by the pulsed laser ablation method",

abstract = "Ba2NaNb5O15 (BNN) thin films were grown on MgO(100) by the pulsed laser ablation method using BNN ceramic targets. The characterization of the thin films was carried out by X-ray diffraction, a scanning electron microscope and an electron probe micro analyzer. The chemical composition of BNN thin films approached the BNN stoichiometry and improved with increasing O2 gas pressure. We obtained the BNN single phase thin films with strong c-axis orientation and nearly stoichiometoric composition deposited on MgO(100) at the laser energy density of 5.0 J/cm2, the substrate temperature of 600°C and the O2 gas pressure of 0.3 Torr.",

keywords = "BaNaNbO (BNN), Pulsed laser ablation method, Thin films, X-ray diffraction",

author = "Shizutoshi Ando and Kaoru Konakahara and Soichiro Okamura and Takeyo Tsukamoto",

year = "1998",

month = sep,

doi = "10.1143/jjap.37.5211",

language = "English",

volume = "37",

pages = "5211--5214",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "9 PART B",

}

TY - JOUR

T1 - Growth of Ba2NaNb5O15 thin films on MgO(100) by the pulsed laser ablation method

AU - Ando, Shizutoshi

AU - Konakahara, Kaoru

AU - Okamura, Soichiro

AU - Tsukamoto, Takeyo

PY - 1998/9

Y1 - 1998/9

N2 - Ba2NaNb5O15 (BNN) thin films were grown on MgO(100) by the pulsed laser ablation method using BNN ceramic targets. The characterization of the thin films was carried out by X-ray diffraction, a scanning electron microscope and an electron probe micro analyzer. The chemical composition of BNN thin films approached the BNN stoichiometry and improved with increasing O2 gas pressure. We obtained the BNN single phase thin films with strong c-axis orientation and nearly stoichiometoric composition deposited on MgO(100) at the laser energy density of 5.0 J/cm2, the substrate temperature of 600°C and the O2 gas pressure of 0.3 Torr.

AB - Ba2NaNb5O15 (BNN) thin films were grown on MgO(100) by the pulsed laser ablation method using BNN ceramic targets. The characterization of the thin films was carried out by X-ray diffraction, a scanning electron microscope and an electron probe micro analyzer. The chemical composition of BNN thin films approached the BNN stoichiometry and improved with increasing O2 gas pressure. We obtained the BNN single phase thin films with strong c-axis orientation and nearly stoichiometoric composition deposited on MgO(100) at the laser energy density of 5.0 J/cm2, the substrate temperature of 600°C and the O2 gas pressure of 0.3 Torr.

KW - BaNaNbO (BNN)

KW - Pulsed laser ablation method

KW - Thin films

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/0032154319

U2 - 10.1143/jjap.37.5211

DO - 10.1143/jjap.37.5211

M3 - Article

AN - SCOPUS:0032154319

SN - 0021-4922

VL - 37

SP - 5211

EP - 5214

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 PART B

ER -

Growth of Ba₂NaNb₅O₁₅ thin films on MgO(100) by the pulsed laser ablation method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this