[Formula presented] Orbital Doping into [Formula presented] Charge-Ordered Molecular Insulator

T. Itou, K. Hiraki, H. Taniguchi, K. Kanoda, T. Takahashi

Research output: Contribution to journalArticle

Abstract

A quasi-one-dimensional [Formula presented]-electron charge-ordered insulator, [Formula presented], is metallized by Cu doping into the Ag sites. It is found that with doping the charge gap is diminished and then disorder-induced insulating nature comes up, eventually followed by transition or crossover to a [Formula presented]-[Formula presented] networked metal. The profile of the charge-gap collapse is consistent with the prediction of the theory highlighting the interplay between electron correlation and disorder. The present doping method is regarded as doping of [Formula presented] orbital, which is different from the conventional charge and/or spin doping developed in cuprates and manganites.

Original languageEnglish
JournalPhysical Review Letters
Volume89
Issue number24
DOIs
Publication statusPublished - 1 Jan 2002

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