Formation and structure analysis of very long ErSi2 nanowires formed on Si(110) substrates

Ryouki Watanabe; Susumu Harako; Takashi Kuzuu; Kazuki Kouno; Tomohiro Kobayashi; Takashi Meguro; Xinwei Zhao

doi:10.1143/JJAP.45.5535

Formation and structure analysis of very long ErSi₂ nanowires formed on Si(110) substrates

Ryouki Watanabe, Susumu Harako, Takashi Kuzuu, Kazuki Kouno, Tomohiro Kobayashi, Takashi Meguro, Xinwei Zhao

Department of Physics

Research output: Contribution to journal › Review article › peer-review

6 Citations (Scopus)

Abstract

Very long ErSi₂ nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si 〈011〉 direction. Nanowires with lengths more than 50 μm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their c-axis (〈0001〉 direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi₂ chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi₂ nanowires were good conductors at room temperature. The ErSi₂ nanowire might be a promising candidate in nanometer-sized inter connection.

Original language	English
Pages (from-to)	5535-5537
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	6 B
DOIs	https://doi.org/10.1143/JJAP.45.5535
Publication status	Published - 20 Jun 2006

Keywords

Crystal structure
ErSi
Nanowire
TEM

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10.1143/JJAP.45.5535

Cite this

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title = "Formation and structure analysis of very long ErSi2 nanowires formed on Si(110) substrates",

abstract = "Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si 〈011〉 direction. Nanowires with lengths more than 50 μm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their c-axis (〈0001〉 direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi2 chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi2 nanowires were good conductors at room temperature. The ErSi2 nanowire might be a promising candidate in nanometer-sized inter connection.",

keywords = "Crystal structure, ErSi, Nanowire, TEM",

author = "Ryouki Watanabe and Susumu Harako and Takashi Kuzuu and Kazuki Kouno and Tomohiro Kobayashi and Takashi Meguro and Xinwei Zhao",

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T1 - Formation and structure analysis of very long ErSi2 nanowires formed on Si(110) substrates

AU - Watanabe, Ryouki

AU - Harako, Susumu

AU - Kuzuu, Takashi

AU - Kouno, Kazuki

AU - Kobayashi, Tomohiro

AU - Meguro, Takashi

AU - Zhao, Xinwei

PY - 2006/6/20

Y1 - 2006/6/20

N2 - Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si 〈011〉 direction. Nanowires with lengths more than 50 μm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their c-axis (〈0001〉 direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi2 chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi2 nanowires were good conductors at room temperature. The ErSi2 nanowire might be a promising candidate in nanometer-sized inter connection.

AB - Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si 〈011〉 direction. Nanowires with lengths more than 50 μm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their c-axis (〈0001〉 direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi2 chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi2 nanowires were good conductors at room temperature. The ErSi2 nanowire might be a promising candidate in nanometer-sized inter connection.

KW - Crystal structure

KW - ErSi

KW - Nanowire

KW - TEM

UR - https://www.scopus.com/pages/publications/33745675705

U2 - 10.1143/JJAP.45.5535

DO - 10.1143/JJAP.45.5535

M3 - Review article

AN - SCOPUS:33745675705

SN - 0021-4922

VL - 45

SP - 5535

EP - 5537

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 B

ER -

Formation and structure analysis of very long ErSi₂ nanowires formed on Si(110) substrates

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Keywords

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