Ferroelectric and electronic properties of undoped-Bi4Ti 3O12 thin film on TiO2 anatase layer

Tohru Higuchi; Takeyo Tsukamoto

doi:10.1080/00150190701527324

Ferroelectric and electronic properties of undoped-Bi₄Ti ₃O₁₂ thin film on TiO₂ anatase layer

Tohru Higuchi, Takeyo Tsukamoto

Department of Applied Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bi₄Ti₃O₁₂ (BIT) thin films with TiO ₂ anatase layer have been prepared on the Pt/Ti/SiO₂/Si substrates by metalorganic chemical vapor deposition. The BIT thin films with TiO₂ anatase layer exhibit highly a- and b-axes orientation, although the BIT thin film with no layer exhibits a c-axis orientation. The interdiffusion between BIT thin film and Pt substrate was prevented by inserting TiO₂ anatase layer. The ferroelectricity depends on the thickness ratio of the BIT thin film to the TiO₂ anatase layer, indicating that the TiO₂ anatase layer acts not as barrier layer but as an initial nucleation layer. When the thickness ratio was fixed at [(BIT)/(TiO ₂)] = 15, the remanent polarization (P_r) and the coercive field (E_c) were 2P_r = 81.6 μC/cm² and 2E_c = 250 kV/cm, respectively. The dielectric constant (ε_r) is 160.

Original language	English
Pages (from-to)	9-16
Number of pages	8
Journal	Ferroelectrics
Volume	357
Issue number	1 PART 3
DOIs	https://doi.org/10.1080/00150190701527324
Publication status	Published - 2007
Event	5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan Duration: 3 Sept 2006 → 7 Sept 2006

Keywords

BiTiO (BIT) thin film
Electronic structure
Initial nucleation
MOCVD
TiO anatase layer

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title = "Ferroelectric and electronic properties of undoped-Bi4Ti 3O12 thin film on TiO2 anatase layer",

abstract = "Bi4Ti3O12 (BIT) thin films with TiO 2 anatase layer have been prepared on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The BIT thin films with TiO2 anatase layer exhibit highly a- and b-axes orientation, although the BIT thin film with no layer exhibits a c-axis orientation. The interdiffusion between BIT thin film and Pt substrate was prevented by inserting TiO2 anatase layer. The ferroelectricity depends on the thickness ratio of the BIT thin film to the TiO2 anatase layer, indicating that the TiO2 anatase layer acts not as barrier layer but as an initial nucleation layer. When the thickness ratio was fixed at [(BIT)/(TiO 2)] = 15, the remanent polarization (Pr) and the coercive field (Ec) were 2Pr = 81.6 μC/cm2 and 2Ec = 250 kV/cm, respectively. The dielectric constant (εr) is 160.",

keywords = "BiTiO (BIT) thin film, Electronic structure, Initial nucleation, MOCVD, TiO anatase layer",

author = "Tohru Higuchi and Takeyo Tsukamoto",

note = "Funding Information: The authors would like to thank Mr. M. Nakamura and Mr. Y. Hachisu of our laboratory, and Prof. T. Hattori for their assistance in the experiments. This work was partially supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.; 5th Asian Meeting on Ferroelectricity, AMF-5 ; Conference date: 03-09-2006 Through 07-09-2006",

year = "2007",

doi = "10.1080/00150190701527324",

language = "English",

volume = "357",

pages = "9--16",

journal = "Ferroelectrics",

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publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Ferroelectric and electronic properties of undoped-Bi4Ti 3O12 thin film on TiO2 anatase layer

AU - Higuchi, Tohru

AU - Tsukamoto, Takeyo

N1 - Funding Information: The authors would like to thank Mr. M. Nakamura and Mr. Y. Hachisu of our laboratory, and Prof. T. Hattori for their assistance in the experiments. This work was partially supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2007

Y1 - 2007

N2 - Bi4Ti3O12 (BIT) thin films with TiO 2 anatase layer have been prepared on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The BIT thin films with TiO2 anatase layer exhibit highly a- and b-axes orientation, although the BIT thin film with no layer exhibits a c-axis orientation. The interdiffusion between BIT thin film and Pt substrate was prevented by inserting TiO2 anatase layer. The ferroelectricity depends on the thickness ratio of the BIT thin film to the TiO2 anatase layer, indicating that the TiO2 anatase layer acts not as barrier layer but as an initial nucleation layer. When the thickness ratio was fixed at [(BIT)/(TiO 2)] = 15, the remanent polarization (Pr) and the coercive field (Ec) were 2Pr = 81.6 μC/cm2 and 2Ec = 250 kV/cm, respectively. The dielectric constant (εr) is 160.

AB - Bi4Ti3O12 (BIT) thin films with TiO 2 anatase layer have been prepared on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The BIT thin films with TiO2 anatase layer exhibit highly a- and b-axes orientation, although the BIT thin film with no layer exhibits a c-axis orientation. The interdiffusion between BIT thin film and Pt substrate was prevented by inserting TiO2 anatase layer. The ferroelectricity depends on the thickness ratio of the BIT thin film to the TiO2 anatase layer, indicating that the TiO2 anatase layer acts not as barrier layer but as an initial nucleation layer. When the thickness ratio was fixed at [(BIT)/(TiO 2)] = 15, the remanent polarization (Pr) and the coercive field (Ec) were 2Pr = 81.6 μC/cm2 and 2Ec = 250 kV/cm, respectively. The dielectric constant (εr) is 160.

KW - BiTiO (BIT) thin film

KW - Electronic structure

KW - Initial nucleation

KW - MOCVD

KW - TiO anatase layer

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U2 - 10.1080/00150190701527324

DO - 10.1080/00150190701527324

M3 - Conference article

AN - SCOPUS:75449109812

SN - 0015-0193

VL - 357

SP - 9

EP - 16

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 3

T2 - 5th Asian Meeting on Ferroelectricity, AMF-5

Y2 - 3 September 2006 through 7 September 2006

ER -

Ferroelectric and electronic properties of undoped-Bi₄Ti ₃O₁₂ thin film on TiO₂ anatase layer

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Keywords

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