Extracting BTI-induced degradation without temporal factors by using BTI-Sensitive and BTI-insensitive ring oscillators

Ryo Kishida, Takuya Asuke, Jun Furuta, Kazutoshi Kobayashil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Measuring bias temperature instability (BTI) by ring oscillators (ROs) is frequently used. However, the performance of a semiconductor chip is fluctuated dynamically due to bias, temperature and etc. BTI-sensitive and -insensitive ROs are implemented in order to extract BTI-induced degradation without temporal fluctuation factors. A test chip including those ROs was fabricated in a 65 nm process. BTI-induced degradation without temporal fluctuation was successfully measured by subtracting results of BTI-insensitive ROs from those of BTI-sensitive ones. Performance degradation of NMOS and PMOS transistors mainly due to BTI increases along logarithmic and exponential functions, respectively.

Original languageEnglish
Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages24-27
Number of pages4
ISBN (Electronic)9781728114668
DOIs
Publication statusPublished - Mar 2019
Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Fukuoka Prefecture, Japan
Duration: 18 Mar 201921 Mar 2019

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2019-March

Conference

Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
CountryJapan
CityKitakyushu City, Fukuoka Prefecture
Period18/03/1921/03/19

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Keywords

  • Bias Temperature Instability (BTI)
  • Negative BTI (NBTI)
  • Positive BTI (PBTI)
  • Ring Oscillator (RO)

Cite this

Kishida, R., Asuke, T., Furuta, J., & Kobayashil, K. (2019). Extracting BTI-induced degradation without temporal factors by using BTI-Sensitive and BTI-insensitive ring oscillators. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 24-27). [8730967] (IEEE International Conference on Microelectronic Test Structures; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2019.8730967