Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

Can Ming Hu, Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi

Research output: Contribution to journalConference article

Abstract

We report studies of the in-plane magneto-transport properties of a 2DEG in an InAs inserted InGaAs/InAlAs heterostructure with a DC bias voltage. Temperature dependent zero-bias reduction of the longitudinal resistance was observed when high magnetic field is applied along the sample growth direction. We interpret the observed resistance reduction as the result of a Coulomb gap existing at the Fermi level of the 2DEG.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - May 2000
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 12 Jul 199916 Jul 1999

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