We report studies of the in-plane magneto-transport properties of a 2DEG in an InAs inserted InGaAs/InAlAs heterostructure with a DC bias voltage. Temperature dependent zero-bias reduction of the longitudinal resistance was observed when high magnetic field is applied along the sample growth direction. We interpret the observed resistance reduction as the result of a Coulomb gap existing at the Fermi level of the 2DEG.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - May 2000|
|Event||MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn|
Duration: 12 Jul 1999 → 16 Jul 1999