Evaluation of line edge roughness in nanoimprint using photo-curable polymer

Y. Kurashima, M. Komuro, H. Hiroshima, J. Taniguchi, I. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanoimprint technology is attractive for fabrication technique of patterns below 100-nm dimension. We have already attempted to replicate a mold pattern onto a liquid polymer solidified with UV light irradiation in order to avoid a deformation due to thermal expansion and succeeded to transfer pattern with 60 nm line-width. However the transfer pattern had a fluctuation in line width, mainly due to fluctuation of mold pattern itself. It is strongly required to demonstrate the ultimate accuracy of the replicated pattern in photo-curable nanoimprint and to investigate a line edge roughness (LER). In order to make clear this problem, we examined characteristics of the LER in photo-curable imprint using a mold with atomically flat sidewall.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages158-159
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
Publication statusPublished - 1 Jan 2002
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 6 Nov 20028 Nov 2002

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period6/11/028/11/02

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Kurashima, Y., Komuro, M., Hiroshima, H., Taniguchi, J., & Miyamoto, I. (2002). Evaluation of line edge roughness in nanoimprint using photo-curable polymer. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 158-159). [1178592] (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178592