Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

A. Harada, H. Yamaoka, R. Ogata, K. Watanabe, Kentaro Kinoshita, S. Kishida, T. Nokami, T. Itoh

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Abstract

Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.

Original languageEnglish
Pages (from-to)6966-6969
Number of pages4
JournalJournal of Materials Chemistry C
Volume3
Issue number27
DOIs
Publication statusPublished - 21 Jul 2015

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