Electrical resistivity and thermopower of hole-doped delafossite CuCoO2 polycrystals

K. Kurita, M. Yagisawa, R. Okazaki

Research output: Contribution to journalArticlepeer-review

Abstract

We have synthesized the polycrystalline samples of the delafossite oxide CuCo1yMgyO2 through the thermal decomposition of copper–cobalt–magnesium hydroxycarbonates. As is expected from the theoretical calculations, relatively large thermopower of S ∼ 700 μV K−1 is observed at room temperature in the parent compound CuCoO2, whereas the resistivity is too high even in the doped compounds compared with other thermoelectric oxides. The high-temperature transport is thermal-activation type characterized by two energy gaps, Δρ and ΔS, which are estimated from the resistivity and the thermopower, respectively. In the parent compound, we obtain Δρ ; 0.47 eV and ΔS ; 0.38 eV. We find that Δρ is larger than ΔS in all the samples, implying a mobility gap opening due to a grain-boundary scattering.

Original languageEnglish
Article number013001 013001
JournalJapanese Journal of Applied Physics
Volume60
Issue number1
DOIs
Publication statusPublished - Jan 2021

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