Electrical resistivity and thermopower of hole-doped delafossite CuCoO2 polycrystals

K. Kurita, M. Yagisawa, R. Okazaki

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We have synthesized the polycrystalline samples of the delafossite oxide CuCo1yMgyO2 through the thermal decomposition of copper–cobalt–magnesium hydroxycarbonates. As is expected from the theoretical calculations, relatively large thermopower of S ∼ 700 μV K−1 is observed at room temperature in the parent compound CuCoO2, whereas the resistivity is too high even in the doped compounds compared with other thermoelectric oxides. The high-temperature transport is thermal-activation type characterized by two energy gaps, Δρ and ΔS, which are estimated from the resistivity and the thermopower, respectively. In the parent compound, we obtain Δρ ; 0.47 eV and ΔS ; 0.38 eV. We find that Δρ is larger than ΔS in all the samples, implying a mobility gap opening due to a grain-boundary scattering.

Original languageEnglish
Article number013001 013001
JournalJapanese Journal of Applied Physics
Issue number1
Publication statusPublished - Jan 2021

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