Effects of active hydrogen on atomic layer epitaxy of GaAs

T. Meguro, H. Isshiki, J. S. Lee, S. Iwai, Y. Aoyagi

Research output: Contribution to journalArticlepeer-review

Abstract

Atomic layer epitaxy of GaAs employing thermally activated hydrogen molecules is reported. It is found that hydrogen molecules thermally activated in a high-temperature cell reduce the ALE temperature, while the activation energy of formation of the methyl-Ga surface from the As surface does not change. On the other hand, the activation energy of formation of the As surface from the methyl-Ga surface remarkably decreases in the active hydrogen flow, indicating that AsH 3 molecules dissociate into AsH x (x = 1 or 2) in the vapor phase.

Original languageEnglish
Pages (from-to)118-121
Number of pages4
JournalApplied Surface Science
Volume112
DOIs
Publication statusPublished - Mar 1997

Keywords

  • ALE window
  • Active hydrogen
  • Atomic layer epitaxy
  • Carbon incorporation
  • GaAs

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