Effect of doping concentration on Nd-related photoluminescence in TiO2 with Al co-doping

Mariko Murayama; Yushi Yanagida; Shuji Komuro; Xinwei Zhao

doi:10.1088/1742-6596/864/1/012068

Effect of doping concentration on Nd-related photoluminescence in TiO₂ with Al co-doping

Mariko Murayama, Yushi Yanagida, Shuji Komuro, Xinwei Zhao

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Nd doped, Nd-Al co-doped anatase phase TiO₂ thin films were fabricated on silicon substrates by laser ablation and post annealing. The result of measuring PL spectra showed intense emissions from a luminescent centre of Nd³⁺ ions in these thin films. The luminescence of Nd-Al co-doped samples were stronger and broader than only Nd doped samples. Doping concentration of Nd determined suitable co-doping concentration of Al and post annealing temperature. Also there is the difference of shape of the PL spectra which indicates that the difference of local fine structure around Nd. Based on these facts, XAFS spectra was measured and suggested that the coordination around Nd was changed by this Al-co-doping.

Original language	English
Article number	012068
Journal	Journal of Physics: Conference Series
Volume	864
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/864/1/012068
Publication status	Published - 15 Aug 2017
Event	33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China Duration: 31 Jul 2016 → 5 Aug 2016

Access to Document

10.1088/1742-6596/864/1/012068

Cite this

@article{452faede40cc40a895c150d1d125157f,

title = "Effect of doping concentration on Nd-related photoluminescence in TiO2 with Al co-doping",

abstract = "Nd doped, Nd-Al co-doped anatase phase TiO2 thin films were fabricated on silicon substrates by laser ablation and post annealing. The result of measuring PL spectra showed intense emissions from a luminescent centre of Nd3+ ions in these thin films. The luminescence of Nd-Al co-doped samples were stronger and broader than only Nd doped samples. Doping concentration of Nd determined suitable co-doping concentration of Al and post annealing temperature. Also there is the difference of shape of the PL spectra which indicates that the difference of local fine structure around Nd. Based on these facts, XAFS spectra was measured and suggested that the coordination around Nd was changed by this Al-co-doping.",

author = "Mariko Murayama and Yushi Yanagida and Shuji Komuro and Xinwei Zhao",

year = "2017",

month = aug,

day = "15",

doi = "10.1088/1742-6596/864/1/012068",

language = "English",

volume = "864",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "33rd International Conference on the Physics of Semiconductors, ICPS 2016 ; Conference date: 31-07-2016 Through 05-08-2016",

}

TY - JOUR

T1 - Effect of doping concentration on Nd-related photoluminescence in TiO2 with Al co-doping

AU - Murayama, Mariko

AU - Yanagida, Yushi

AU - Komuro, Shuji

AU - Zhao, Xinwei

PY - 2017/8/15

Y1 - 2017/8/15

N2 - Nd doped, Nd-Al co-doped anatase phase TiO2 thin films were fabricated on silicon substrates by laser ablation and post annealing. The result of measuring PL spectra showed intense emissions from a luminescent centre of Nd3+ ions in these thin films. The luminescence of Nd-Al co-doped samples were stronger and broader than only Nd doped samples. Doping concentration of Nd determined suitable co-doping concentration of Al and post annealing temperature. Also there is the difference of shape of the PL spectra which indicates that the difference of local fine structure around Nd. Based on these facts, XAFS spectra was measured and suggested that the coordination around Nd was changed by this Al-co-doping.

AB - Nd doped, Nd-Al co-doped anatase phase TiO2 thin films were fabricated on silicon substrates by laser ablation and post annealing. The result of measuring PL spectra showed intense emissions from a luminescent centre of Nd3+ ions in these thin films. The luminescence of Nd-Al co-doped samples were stronger and broader than only Nd doped samples. Doping concentration of Nd determined suitable co-doping concentration of Al and post annealing temperature. Also there is the difference of shape of the PL spectra which indicates that the difference of local fine structure around Nd. Based on these facts, XAFS spectra was measured and suggested that the coordination around Nd was changed by this Al-co-doping.

UR - https://www.scopus.com/pages/publications/85028749150

U2 - 10.1088/1742-6596/864/1/012068

DO - 10.1088/1742-6596/864/1/012068

M3 - Conference article

AN - SCOPUS:85028749150

SN - 1742-6588

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012068

T2 - 33rd International Conference on the Physics of Semiconductors, ICPS 2016

Y2 - 31 July 2016 through 5 August 2016

ER -

Effect of doping concentration on Nd-related photoluminescence in TiO₂ with Al co-doping

Abstract

Access to Document

Other files and links

Fingerprint

Cite this