@inproceedings{80eed2f390c54396ad5261bb16debe43,
title = "Direct bonding of Germanium and Diamond substrates by reduction process",
abstract = "For efficient heat dissipation from Ge-based high-speed devices, we performed direct bonding of Ge and diamond substrates. The conventional hydrophilic bonding process employs oxidizing pre-bonding treatment; however, this process develops a thick oxide layer at the bonding interface. In this study, the Ge substrate was reduced by HCl acid and then bonded with the diamond substrate. The thickness of the bonding interface was 1.6 μm, which is significantly thin compared with the previous studies using the oxidizing treatment.",
keywords = "Germanium, diamond, direct bonding, hydrophilic bonding, reduction process",
author = "Yuki Minowa and Takashi Matsumae and Masanori Hayase and Yuichi Kurashima and Hideki Takagi",
note = "Publisher Copyright: {\textcopyright} 2024 Japan Institute of Electronics Packaging.; 23rd International Conference on Electronics Packaging, ICEP 2024 ; Conference date: 17-04-2024 Through 20-04-2024",
year = "2024",
doi = "10.23919/ICEP61562.2024.10535650",
language = "English",
series = "2024 International Conference on Electronics Packaging, ICEP 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "119--120",
booktitle = "2024 International Conference on Electronics Packaging, ICEP 2024",
}