Direct bonding of germanium and diamond substrates by hydrophilic bonding

Yuki Minowa, Takashi Matsumae, Masanori Hayase, Yuichi Kurashima, Hideki Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Germanium (Ge) is attracting attention as a high-frequency device material, but its low thermal conductivity causes a heat dissipation problem. To overcome this drawback, we demonstrate the direct bonding of the Ge substrate with a diamond heat-dissipating substrate, which has the highest thermal conductivity among solids. The Ge substrate was activated by oxygen plasma, and the diamond substrate was washed with a mixture of NH3/H2O2, and then the two substrates were brought into contact with each other. The substrates were then heated at 200°C for 2 hours with a bond load of 3 MPa. The above process resulted in the direct bonding of the Ge and diamond substrates. This direct bonding improves the heat dissipation of Ge devices, which will contribute to next-generation high-speed devices.

Original languageEnglish
Title of host publication2023 International Conference on Electronics Packaging, ICEP 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages171-172
Number of pages2
ISBN (Electronic)9784991191152
DOIs
Publication statusPublished - 2023
Event22nd International Conference on Electronics Packaging, ICEP 2023 - Kumamoto, Japan
Duration: 19 Apr 202322 Apr 2023

Publication series

Name2023 International Conference on Electronics Packaging, ICEP 2023

Conference

Conference22nd International Conference on Electronics Packaging, ICEP 2023
Country/TerritoryJapan
CityKumamoto
Period19/04/2322/04/23

Keywords

  • diamond
  • direct bonding
  • germanium
  • hydrophilic bonding
  • oxygen plasma

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