Digital etching of GaAs using alternative incidence of CL radicals and low energy Ar ions

Takashi Meguro; Masashi Ishll; Hirokazu Kodama; Manabu Hamagaki; Tamio Hara; Yasuhiro Yamamoto; Yoshinobu Aoyagi

Digital etching of GaAs using alternative incidence of CL radicals and low energy Ar ions

Takashi Meguro, Masashi Ishll, Hirokazu Kodama, Manabu Hamagaki, Tamio Hara, Yasuhiro Yamamoto, Yoshinobu Aoyagi

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Digital etching of GaAs is successfully realized using Cl radical pulse under alternating low energy Ar ion irradiation. Etch rates are independent of Cl₂ feed time between 0.3-0.7 seconds. When the substrate is biased at -35 V, an etch rate which corresponds to one monoatomic layer (0.5 monolayer (ML) per cycle is obtained. Cross-sectional etch profile when the etch rate is 0.5 ML/cycle is rectangular, without any substrech, and is quite different from the profile obtained for other conditions.

Original language	English
Pages	893-896
Number of pages	4
Publication status	Published - 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 22 Aug 1990 → 24 Aug 1990

Conference

Conference	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	22/08/90 → 24/08/90

Cite this

@conference{fc8076348ee04d19bec72e99f582ffc1,

title = "Digital etching of GaAs using alternative incidence of CL radicals and low energy Ar ions",

abstract = "Digital etching of GaAs is successfully realized using Cl radical pulse under alternating low energy Ar ion irradiation. Etch rates are independent of Cl2 feed time between 0.3-0.7 seconds. When the substrate is biased at -35 V, an etch rate which corresponds to one monoatomic layer (0.5 monolayer (ML) per cycle is obtained. Cross-sectional etch profile when the etch rate is 0.5 ML/cycle is rectangular, without any substrech, and is quite different from the profile obtained for other conditions.",

author = "Takashi Meguro and Masashi Ishll and Hirokazu Kodama and Manabu Hamagaki and Tamio Hara and Yasuhiro Yamamoto and Yoshinobu Aoyagi",

year = "1990",

language = "English",

pages = "893--896",

}

TY - CONF

T1 - Digital etching of GaAs using alternative incidence of CL radicals and low energy Ar ions

AU - Meguro, Takashi

AU - Ishll, Masashi

AU - Kodama, Hirokazu

AU - Hamagaki, Manabu

AU - Hara, Tamio

AU - Yamamoto, Yasuhiro

AU - Aoyagi, Yoshinobu

PY - 1990

Y1 - 1990

N2 - Digital etching of GaAs is successfully realized using Cl radical pulse under alternating low energy Ar ion irradiation. Etch rates are independent of Cl2 feed time between 0.3-0.7 seconds. When the substrate is biased at -35 V, an etch rate which corresponds to one monoatomic layer (0.5 monolayer (ML) per cycle is obtained. Cross-sectional etch profile when the etch rate is 0.5 ML/cycle is rectangular, without any substrech, and is quite different from the profile obtained for other conditions.

AB - Digital etching of GaAs is successfully realized using Cl radical pulse under alternating low energy Ar ion irradiation. Etch rates are independent of Cl2 feed time between 0.3-0.7 seconds. When the substrate is biased at -35 V, an etch rate which corresponds to one monoatomic layer (0.5 monolayer (ML) per cycle is obtained. Cross-sectional etch profile when the etch rate is 0.5 ML/cycle is rectangular, without any substrech, and is quite different from the profile obtained for other conditions.

UR - https://www.scopus.com/pages/publications/0025555399

M3 - Paper

AN - SCOPUS:0025555399

SP - 893

EP - 896

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

Digital etching of GaAs using alternative incidence of CL radicals and low energy Ar ions

Abstract

Conference

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