Digital etching. New approach of layer-by-layer processing

T. Meguro, M. Ishii, M. Hamagaki, T. Hara, Y. Yamamoto, Y. Aoyagi

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The layer-by-layer controlled atomic layer etching (AL etching) is realized by using alternative incidence of Cl radicals and low energy Ar ions. When the applied bias voltage to the sample was -35 V (no physical sputtering region), etch rates independent of Cl2 feed time, which correspond to the 0.5 monolayer (ML) of GaAs (0.142 nm), were obtained between 0.3 and 0.5 seconds of Cl2 feed time.

Original languageEnglish
Pages (from-to)163-169
Number of pages7
JournalActa Polytechnica Scandinavica, Chemical Technology and Metallurgy Series
Issue number195
Publication statusPublished - 1990
EventFirst International Symposium on Atomic Layer Epitaxy - Espoo, Finl
Duration: 11 Jun 199013 Jun 1990

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