The layer-by-layer controlled atomic layer etching (AL etching) is realized by using alternative incidence of Cl radicals and low energy Ar ions. When the applied bias voltage to the sample was -35 V (no physical sputtering region), etch rates independent of Cl2 feed time, which correspond to the 0.5 monolayer (ML) of GaAs (0.142 nm), were obtained between 0.3 and 0.5 seconds of Cl2 feed time.
|Number of pages||7|
|Journal||Acta Polytechnica Scandinavica, Chemical Technology and Metallurgy Series|
|Publication status||Published - 1990|
|Event||First International Symposium on Atomic Layer Epitaxy - Espoo, Finl|
Duration: 11 Jun 1990 → 13 Jun 1990