Crystal growth of photovoltaic polycrystalline Si1-xGe x by die-casting growth

H. Hirahara; T. Iida; Y. Sugiyama; T. Baba; Y. Takanashi; S. Sakuragi

Crystal growth of photovoltaic polycrystalline Si_1-xGe _x by die-casting growth

H. Hirahara, T. Iida, Y. Sugiyama, T. Baba, Y. Takanashi, S. Sakuragi

Department of Materials Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Coin-shaped multicrystalline Si_1-xGe_x crystals were grown using a Brigdman method combined with die-casting growth. Si _1-xGe_x alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si_1-xGe_x alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si _1-xGe_x precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si_1-xGe_x sample, Si_1-xGe_x (x= 0.5 ±3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.

Original language	English
Article number	L5.44
Pages (from-to)	191-196
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	836
Publication status	Published - 19 Dec 2005
Event	2004 Materials Research Society Fall Meeting - Boston, MA, United States Duration: 29 Nov 2004 → 2 Dec 2004

Cite this

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title = "Crystal growth of photovoltaic polycrystalline Si1-xGe x by die-casting growth",

abstract = "Coin-shaped multicrystalline Si1-xGex crystals were grown using a Brigdman method combined with die-casting growth. Si 1-xGex alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si1-xGex alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si 1-xGex precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si1-xGex sample, Si1-xGex (x= 0.5 ±3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.",

author = "H. Hirahara and T. Iida and Y. Sugiyama and T. Baba and Y. Takanashi and S. Sakuragi",

year = "2005",

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day = "19",

language = "English",

volume = "836",

pages = "191--196",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2004 Materials Research Society Fall Meeting ; Conference date: 29-11-2004 Through 02-12-2004",

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TY - JOUR

T1 - Crystal growth of photovoltaic polycrystalline Si1-xGe x by die-casting growth

AU - Hirahara, H.

AU - Iida, T.

AU - Sugiyama, Y.

AU - Baba, T.

AU - Takanashi, Y.

AU - Sakuragi, S.

PY - 2005/12/19

Y1 - 2005/12/19

N2 - Coin-shaped multicrystalline Si1-xGex crystals were grown using a Brigdman method combined with die-casting growth. Si 1-xGex alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si1-xGex alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si 1-xGex precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si1-xGex sample, Si1-xGex (x= 0.5 ±3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.

AB - Coin-shaped multicrystalline Si1-xGex crystals were grown using a Brigdman method combined with die-casting growth. Si 1-xGex alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si1-xGex alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si 1-xGex precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si1-xGex sample, Si1-xGex (x= 0.5 ±3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.

UR - http://www.scopus.com/inward/record.url?scp=28844509623&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:28844509623

SN - 0272-9172

VL - 836

SP - 191

EP - 196

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - L5.44

T2 - 2004 Materials Research Society Fall Meeting

Y2 - 29 November 2004 through 2 December 2004

ER -

Crystal growth of photovoltaic polycrystalline Si_1-xGe _x by die-casting growth

Abstract

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