TY - JOUR
T1 - Crystal growth of Mg2Si by the vertical bridgman method and the doping effect of bi and AI on thermoelectric characteristics
AU - Fukano, Masataka
AU - Iida, Tsutomu
AU - Makino, Kenichiro
AU - Akasaka, Masayasu
AU - Oguni, Yohei
AU - Takanashi, Yoshifumi
PY - 2008/10/9
Y1 - 2008/10/9
N2 - Mg2Si bulk crystals were grown using the vertical Bridgman melt growth method. As n-type dopants, Bi and Al were incorporated during the growth. Thermoelectric properties, such as Seebeck coefficient, electrical conductivity and thermal conductivity, were measured as a function of temperature, up to 850 K. The maximum value of the dimensionless figure of merit, ZT, was 1.08 with a 3 at% Bi doped specimen. For a Bi+Al doped sample, the influence of Al co-doping resulted in slight improvements in power factor and thermal conductivity at elevated temperatures. However, no remarkable increase in the figure of merit was observed.
AB - Mg2Si bulk crystals were grown using the vertical Bridgman melt growth method. As n-type dopants, Bi and Al were incorporated during the growth. Thermoelectric properties, such as Seebeck coefficient, electrical conductivity and thermal conductivity, were measured as a function of temperature, up to 850 K. The maximum value of the dimensionless figure of merit, ZT, was 1.08 with a 3 at% Bi doped specimen. For a Bi+Al doped sample, the influence of Al co-doping resulted in slight improvements in power factor and thermal conductivity at elevated temperatures. However, no remarkable increase in the figure of merit was observed.
UR - http://www.scopus.com/inward/record.url?scp=54749096003&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:54749096003
SN - 0272-9172
VL - 1044
SP - 247
EP - 252
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - Thermoelectric Power Generation
Y2 - 26 November 2007 through 29 November 2007
ER -