The demand for high-density, high-speed programming in flash memories increased because of their expanding applications in portable equipment such as digital still cameras and music players. As such, a constant-charge-injection programming, which realizes fast precise control of Vth by suppressing the characteristic deviation was developed. By utilizing proposed scheme, a 10.3-MB/s programming throughput in multilevel AG-AND flash memories was achieved.
|Number of pages||2|
|Publication status||Published - 1 Dec 2002|
|Event||2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States|
Duration: 13 Jun 2002 → 15 Jun 2002
|Conference||2002 Symposium on VLSI Circuits Digest of Technical Papers|
|Period||13/06/02 → 15/06/02|