Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memories

Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Takayuki Kawahara

Research output: Contribution to conferencePaper

15 Citations (Scopus)

Abstract

The demand for high-density, high-speed programming in flash memories increased because of their expanding applications in portable equipment such as digital still cameras and music players. As such, a constant-charge-injection programming, which realizes fast precise control of Vth by suppressing the characteristic deviation was developed. By utilizing proposed scheme, a 10.3-MB/s programming throughput in multilevel AG-AND flash memories was achieved.

Original languageEnglish
Pages302-303
Number of pages2
Publication statusPublished - 1 Dec 2002
Event2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States
Duration: 13 Jun 200215 Jun 2002

Conference

Conference2002 Symposium on VLSI Circuits Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period13/06/0215/06/02

Cite this

Kurata, H., Saeki, S., Kobayashi, T., Sasago, Y., & Kawahara, T. (2002). Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memories. 302-303. Paper presented at 2002 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, United States.