The advantage of BiCMOS technology over CMOS technology in terms of the access time and the power dissipation is demonstrated for a 1.3-µ.m L-Mbit DRAM with a TTL interface. Two key results are obtained. One is that a BiCMOS driver achieves a 23 percent lower delay time and 28 percent lower power dissipation compared with a CMOS driver. This is due to the inherently small input gate capacitance of the BiCMOS inverter and the small number of inverter stages required to make the BiCMOS driver. The other result is that a 1-Mbit BiCMOS DRAM incorporating the BiCMOS driver provides higher performance in terms of a 36 percent faster access time and 24 percent lower power dissipation after fabrication process deviations and temperature changes. The resistance to the process deviations and temperature changes that the BiCMOS has is responsible for such excellent performance.