Comparison of CMOS and BiCMOS 1-Mbit DRAM Performance

Takao Watanabe, Goro Kitsukawa, Yoshiki Kawajiri, Kiyoo Itoh, Takayuki Kawahara, Ryoichi Hori, Yoshiaki Ouchi, Tetsuro Matsumoto

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Abstract

The advantage of BiCMOS technology over CMOS technology in terms of the access time and the power dissipation is demonstrated for a 1.3-µ.m L-Mbit DRAM with a TTL interface. Two key results are obtained. One is that a BiCMOS driver achieves a 23 percent lower delay time and 28 percent lower power dissipation compared with a CMOS driver. This is due to the inherently small input gate capacitance of the BiCMOS inverter and the small number of inverter stages required to make the BiCMOS driver. The other result is that a 1-Mbit BiCMOS DRAM incorporating the BiCMOS driver provides higher performance in terms of a 36 percent faster access time and 24 percent lower power dissipation after fabrication process deviations and temperature changes. The resistance to the process deviations and temperature changes that the BiCMOS has is responsible for such excellent performance.

Original languageEnglish
Pages (from-to)771-778
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume24
Issue number3
DOIs
Publication statusPublished - Jun 1989

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Watanabe, T., Kitsukawa, G., Kawajiri, Y., Itoh, K., Kawahara, T., Hori, R., ... Matsumoto, T. (1989). Comparison of CMOS and BiCMOS 1-Mbit DRAM Performance. IEEE Journal of Solid-State Circuits, 24(3), 771-778. https://doi.org/10.1109/4.32039