TY - JOUR
T1 - Characterization of polycrystalline Si silicon sheet grown by die casting combined with the Bridgman technique
AU - Saito, K.
AU - Iida, T.
AU - Akimoto, D.
AU - Nose, A.
AU - Takanashi, Y.
AU - Sakuragi, S.
AU - Nanba, H.
AU - Sakuragi, G.
AU - Shimazaki, T.
PY - 2005/12/19
Y1 - 2005/12/19
N2 - Die-casting growth was used for manufacturing the multicrystalline silicon sheet with a size of 100 × 120 × 0.5 mm. During the growth, incorporation of contaminants such as iron, cobalt, nickel and chromium was well suppressed. The average etch-pit density values ranged from 1×l0 4 cm-2 to 4×l06 cm-2 for growth rates of 5 to 60 mm/h, respectively. Measurement of minority-carrier lifetime bye microwave-photoconductivity-decay (μ-PCD) method was 0.5 μs for as-grown specimens, suggesting that defects and residual strain exist in the grown sheet. Moreover, post heat treatment at 1473 K reduced the etch-pit density and improved carrier lifetime up to 2.2 μs.
AB - Die-casting growth was used for manufacturing the multicrystalline silicon sheet with a size of 100 × 120 × 0.5 mm. During the growth, incorporation of contaminants such as iron, cobalt, nickel and chromium was well suppressed. The average etch-pit density values ranged from 1×l0 4 cm-2 to 4×l06 cm-2 for growth rates of 5 to 60 mm/h, respectively. Measurement of minority-carrier lifetime bye microwave-photoconductivity-decay (μ-PCD) method was 0.5 μs for as-grown specimens, suggesting that defects and residual strain exist in the grown sheet. Moreover, post heat treatment at 1473 K reduced the etch-pit density and improved carrier lifetime up to 2.2 μs.
UR - http://www.scopus.com/inward/record.url?scp=28844465079&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:28844465079
SN - 0272-9172
VL - 836
SP - 197
EP - 202
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
M1 - L5.45
T2 - 2004 Materials Research Society Fall Meeting
Y2 - 29 November 2004 through 2 December 2004
ER -