Abstract
Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050°C to 1080°C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 659-663 |
| Number of pages | 5 |
| Publication status | Published - 2006 |
| Event | 2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: 28 Nov 2005 → 2 Dec 2005 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 892 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | 2005 Materials Research Society Fall Meeting |
|---|---|
| Country/Territory | United States |
| City | Boston, MA |
| Period | 28/11/05 → 2/12/05 |
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