Beam assisted layer-by-layer processes and the mechanism in III-V compounds

Yoshinobu Aoyagi, Takashi Meguro, Sohachi Iwai

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

GaAs and GaAlAs thin layers were grown by Ar ion laser wavelength dependence of the growth rate/cycle of GaAs under laser ALE. The growth rate as a function of the number of pulses of trimethyl gallium and the laser between the AsH3 gas supply. The procedure for digital etching beam layer-by-layer processes will become important techniques for future quantum devices and artificially designed electronic materials.

Original languageEnglish
Pages (from-to)55-65
Number of pages11
JournalActa Polytechnica Scandinavica, Chemical Technology and Metallurgy Series
Issue number195
Publication statusPublished - 1990
EventFirst International Symposium on Atomic Layer Epitaxy - Espoo, Finl
Duration: 11 Jun 199013 Jun 1990

Fingerprint

Dive into the research topics of 'Beam assisted layer-by-layer processes and the mechanism in III-V compounds'. Together they form a unique fingerprint.

Cite this