GaAs and GaAlAs thin layers were grown by Ar ion laser wavelength dependence of the growth rate/cycle of GaAs under laser ALE. The growth rate as a function of the number of pulses of trimethyl gallium and the laser between the AsH3 gas supply. The procedure for digital etching beam layer-by-layer processes will become important techniques for future quantum devices and artificially designed electronic materials.
|Number of pages||11|
|Journal||Acta Polytechnica Scandinavica, Chemical Technology and Metallurgy Series|
|Publication status||Published - 1990|
|Event||First International Symposium on Atomic Layer Epitaxy - Espoo, Finl|
Duration: 11 Jun 1990 → 13 Jun 1990